This variable can be set to any directory path where. Before starting Sentaurus Workbench, you must set the STDB environment variable. The resulting data can be used with statistical and spreadsheet tools. Sentaurus TM Device User Guide, Version O-2018.06, June 2018.ĭ. Sentaurus Workbench allows you to define parameters and variables to run comprehensive parametric analyses. Moreover, radiation effects during transient operation of the β-Ga 2O 3 MOSFETs are evaluated and compared for the fabricated and the modified oxide geometries by incorporating carrier generation models with heavy-ions and alpha particles. With a reduced HfO 2 coverage over the channel, the transconductance (g m) is enhanced, the threshold voltage (Vth) shifts toward a positive voltage, both of which are advantageous for device applications. We also investigate and compare electrical performance of the devices with modified HfO 2 gate-oxide geometries.
The results of model shows good agreement with the DC and the AC characteristics of the fabricated device by incorporating proper parameters for the materials, as well as the device models. A Sentaurus TCAD 2-D model of β-Ga 2O 3 metal-oxide semiconductor field-effect transistors (MOSFETs) with a polycrystalline HfO 2 gate-oxide deposited using atomic layer deposition (ALD), which has a semiconductor-on-insulator (SOI) structure, is developed.